Process variation effects on circuit performance: TCAD simulation of 256-Mbit technology [DRAMs]

C. S. Murthy, M. Gall. Process variation effects on circuit performance: TCAD simulation of 256-Mbit technology [DRAMs]. IEEE Trans. on CAD of Integrated Circuits and Systems, 16(11):1383-1389, 1997. [doi]

Abstract

Abstract is missing.