A 290-mV, 3.34-MHz, 6T SRAM With pMOS Access Transistors and Boosted Wordline in 65-nm CMOS Technology

Morteza Nabavi, Manoj Sachdev. A 290-mV, 3.34-MHz, 6T SRAM With pMOS Access Transistors and Boosted Wordline in 65-nm CMOS Technology. J. Solid-State Circuits, 53(2):656-667, 2018. [doi]

Abstract

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