Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities

Vinayak Bharat Naik, J.-H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, Lee Yong Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, Chim Seng Seet, J. Wong, Y. S. You, S. Soss, T. H. Chan, S. Y. Siah. Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 6, IEEE, 2022. [doi]

Abstract

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