Modeling the effect of strong magnetic field on n-type MOSFET in strong inversion

D. V. Nguyen, L. Werling, C. Po, Norbert Dumas, Morgan Madec, Wilfried Uhring, Luc Hebrard, Latifa Fakri-Bouchet, J. Pascal, Y. Wadghiri. Modeling the effect of strong magnetic field on n-type MOSFET in strong inversion. In 25th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2018, Bordeaux, France, December 9-12, 2018. pages 637-640, IEEE, 2018. [doi]

Abstract

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