The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers

Robert O Connor, Greg Hughes. The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers. Microelectronics Reliability, 51(3):524-528, 2011. [doi]

Authors

Robert O Connor

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Greg Hughes

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