Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method

Sangheon Oh, Changhwan Shin. Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method. IEICE Transactions, 99-C(5):541-543, 2016. [doi]

Authors

Sangheon Oh

This author has not been identified. Look up 'Sangheon Oh' in Google

Changhwan Shin

This author has not been identified. Look up 'Changhwan Shin' in Google