Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method

Sangheon Oh, Changhwan Shin. Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method. IEICE Transactions, 99-C(5):541-543, 2016. [doi]

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