Analysis and Modeling of Stress over Layer Induced Threshold Voltage Shift in HKMG nMOS Transistors - researchr publication

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Apoorva Ojha, Narendra Parihar, Nihar R. Mohapatra. Analysis and Modeling of Stress over Layer Induced Threshold Voltage Shift in HKMG nMOS Transistors. In 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, VLSID 2016, Kolkata, India, January 4-8, 2016. pages 323-327, IEEE Computer Society, 2016. [doi]

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