A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process

Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, Kazumasa Yanagisawa. A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2011, Jeju, South Korea, November 14-16, 2011. pages 37-40, IEEE, 2011. [doi]

Abstract

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