A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET

Alisha Oraon, Shradha Shreya, Renuka Kumari, Aminul Islam. A double trench 4H - SiC MOSFET as an enhanced model of SiC UMOSFET. In 7th International Symposium on Embedded Computing and System Design, ISED 2017, Durgapur, India, December 18-20, 2017. pages 1-5, IEEE, 2017. [doi]

Abstract

Abstract is missing.