Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation

Tomohiro Otsuka, Yutaro Yamaguchi 0002, Shintaro Shinjo, Toshiyuki Oishi. Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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