A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications

G. Palma, Elisa Vianello, O. Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, C. Carabasse, Gabriel Molas, B. De Salvo. A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 264-267, IEEE, 2013. [doi]

Abstract

Abstract is missing.