A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications

G. Palma, Elisa Vianello, O. Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, C. Carabasse, Gabriel Molas, B. De Salvo. A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 264-267, IEEE, 2013. [doi]

@inproceedings{PalmaVTOOTCMS13,
  title = {A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications},
  author = {G. Palma and Elisa Vianello and O. Thomas and Houcine Oucheikh and Santhosh Onkaraiah and Alain Toffoli and C. Carabasse and Gabriel Molas and B. De Salvo},
  year = {2013},
  doi = {10.1109/ESSDERC.2013.6818869},
  url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818869},
  researchr = {https://researchr.org/publication/PalmaVTOOTCMS13},
  cites = {0},
  citedby = {0},
  pages = {264-267},
  booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
  publisher = {IEEE},
}