2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

Sang-Soo Park, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Ho Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il Han Park, Chiweon Yoon, Hyunsuk Kim, Jae-Hoon Jang, Seungjae Lee 0001, Ki-Whan Song, Sunghoi Hur. 2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs. J. Solid-State Circuits, 61(1):250-258, January 2026. [doi]

Abstract

Abstract is missing.