An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process

Jaewon Park, Jae-Hoon Lee, Sang-Kil Park, Ki Chul Chun, Kyomin Sohn, Sungho Kang. An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process. IEEE Access, 9:33487-33497, 2021. [doi]

Abstract

Abstract is missing.