Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, Liliana Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, Bernard Dieny. Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices. In 2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018. pages 125-128, IEEE, 2018. [doi]

Abstract

Abstract is missing.