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Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

N. Perrissin, S. Lequeux, N. Strelkov, L. Vila, Liliana Buda-Prejbeanu, S. Auffret, R. C. Sousa, I. L. Prejbeanu, Bernard Dieny. Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices. In 2018 International Conference on IC Design & Technology, ICICDT 2018, Otranto, Italy, June 4-6, 2018. pages 125-128, IEEE, 2018. [doi]

Authors

N. Perrissin

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S. Lequeux

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N. Strelkov

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L. Vila

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Liliana Buda-Prejbeanu

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S. Auffret

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R. C. Sousa

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I. L. Prejbeanu

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Bernard Dieny

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