Milan Pesic, M. Hoffmann, C. Richter, Stefan Slesazeck, T. Kampfe, L. M. Eng, Thomas Mikolajick, Uwe Schroeder. Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 160-163, IEEE, 2017. [doi]
@inproceedings{PesicHRSKEMS17,
title = {Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories},
author = {Milan Pesic and M. Hoffmann and C. Richter and Stefan Slesazeck and T. Kampfe and L. M. Eng and Thomas Mikolajick and Uwe Schroeder},
year = {2017},
doi = {10.1109/ESSDERC.2017.8066616},
url = {https://doi.org/10.1109/ESSDERC.2017.8066616},
researchr = {https://researchr.org/publication/PesicHRSKEMS17},
cites = {0},
citedby = {0},
pages = {160-163},
booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
publisher = {IEEE},
isbn = {978-1-5090-5978-2},
}