Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM - researchr publication authors

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Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick. Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. In 17th Non-Volatile Memory Technology Symposium, NVMTS 2017, Aachen, Germany, August 30 - Sept. 1, 2017. pages 1-4, IEEE, 2017. [doi]

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