The following publications are possibly variants of this publication:
- Breakdown spots of ultra-thin (EOT<1.5nm) HfO::2::/SiO::2:: stacks observed with enhanced - CAFMX. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst. mr, 45(5-6):811-814, 2005. [doi]
- Pre-breakdown noise in electrically stressed thin SiO::2:: layers of MOS devices observed with C-AFMM. Porti, S. Meli, M. Nafría, X. Aymerich. mr, 43(8):1203-1209, 2003. [doi]
- Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS StructuresX. Blasco, M. Nafría, X. Aymerich. mr, 42(9-11):1513-1516, 2002. [doi]