M. Porti, S. Meli, M. Nafría, X. Aymerich. Pre-breakdown noise in electrically stressed thin SiO::2:: layers of MOS devices observed with C-AFM. Microelectronics Reliability, 43(8):1203-1209, 2003. [doi]
@article{PortiMNA03,
title = {Pre-breakdown noise in electrically stressed thin SiO::2:: layers of MOS devices observed with C-AFM},
author = {M. Porti and S. Meli and M. Nafría and X. Aymerich},
year = {2003},
doi = {10.1016/S0026-2714(03)00173-2},
url = {http://dx.doi.org/10.1016/S0026-2714(03)00173-2},
tags = {C++},
researchr = {https://researchr.org/publication/PortiMNA03},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {43},
number = {8},
pages = {1203-1209},
}