Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

M. Porti, M. Nafría, X. Aymerich. Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics Reliability, 43(9-11):1501-1505, 2003. [doi]

Abstract

Abstract is missing.