Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM - researchr publication references

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M. Porti, M. Nafría, X. Aymerich. Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics Reliability, 43(9-11):1501-1505, 2003. [doi]

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