Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well

P. Povolni, D. Schwarz, C. J. Clausen, Y. Elogail, H. S. Funk, Michael Oehme, David Weißhaupt, Jörg Schulze. Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well. In Marko Koricic, Zeljko Butkovic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Predrag Pale, Darko Huljenic, Tihana Galinac Grbac, Matej Janjic, editors, 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija, Croatia, May 20-24, 2019. pages 7-12, IEEE, 2019. [doi]

Abstract

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