Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing

Om Prakash 0007, Kai Ni 0004, Hussam Amrouch. Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 1-10, IEEE, 2022. [doi]

Abstract

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