Characterization of charge trapping in SiO::2::/Al::2::O::3:: dielectric stacks by pulsed C-V technique

Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt. Characterization of charge trapping in SiO::2::/Al::2::O::3:: dielectric stacks by pulsed C-V technique. Microelectronics Reliability, 47(4-5):508-512, 2007. [doi]

Abstract

Abstract is missing.