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Quantum Inversion Charge and Drain Current Analysis for Double Gate FinFET Device: Analytical Modeling and TCAD Simulation Approach

Balwinder Raj, Ashok K. Saxena, Sudeb Dasgupta. Quantum Inversion Charge and Drain Current Analysis for Double Gate FinFET Device: Analytical Modeling and TCAD Simulation Approach. In Fourth UKSim European Symposium on Computer Modeling and Simulation, EMS 2010, Pisa, Italy, November 17-19, 2010. pages 526-530, IEEE Computer Society, 2010. [doi]

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