Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration

Jason D. Reed, Scott Goodwin, Christopher Gregory, Dorota Temple. Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration. In IEEE International Conference on 3D System Integration, 3DIC 2010, Munich, Germany, 16-18 November 2010. pages 1-8, IEEE, 2010. [doi]