TCAD degradation modeling for LDMOS transistors

Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, S. Poli, M.-Y. Chuang, W. Tian, R. Wise. TCAD degradation modeling for LDMOS transistors. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 185-188, IEEE, 2012. [doi]

Abstract

Abstract is missing.