A MOS transistor model for peak voltage calculation of crosstalk noise

Patricia Renault, Pirouz Bazargan-Sabet, Dominique Le Dû. A MOS transistor model for peak voltage calculation of crosstalk noise. In Proceedings of the 2002 9th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2002, Dubrovnik, Croatia, September 15-18, 2002. pages 773-776, IEEE, 2002. [doi]

Abstract

Abstract is missing.