Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo. Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability, 45(12):1842-1854, 2005. [doi]

Abstract

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