Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO::2:: films

R. Rodríguez, M. Porti, M. Nafría, X. Aymerich. Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO::2:: films. Microelectronics Reliability, 41(7):1011-1013, 2001. [doi]

Authors

R. Rodríguez

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M. Porti

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M. Nafría

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X. Aymerich

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