Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs - researchr publication authors

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Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, M. Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni. Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectronics Reliability, 54(9-10):2248-2252, 2014. [doi]

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