Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, M. Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni. Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectronics Reliability, 54(9-10):2248-2252, 2014. [doi]
@article{RossettoRMSDGAF14,
title = {Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs},
author = {Isabella Rossetto and Fabiana Rampazzo and Matteo Meneghini and M. Silvestri and Christian Dua and Piero Gamarra and Raphael Aubry and Marie-Antoinette di Forte-Poisson and O. Patard and Sylvain L. Delage and Gaudenzio Meneghesso and Enrico Zanoni},
year = {2014},
doi = {10.1016/j.microrel.2014.07.092},
url = {http://dx.doi.org/10.1016/j.microrel.2014.07.092},
researchr = {https://researchr.org/publication/RossettoRMSDGAF14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {9-10},
pages = {2248-2252},
}