On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, M. Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, D. Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J. T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni. On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectronics Reliability, 88:397-401, 2018. [doi]

No reviews for this publication, yet.