Hironori Sakamoto, Shigetaka Kumashiro, Shigeo Sato, Naoki Wakita, Tohru Mogami. st principles compact MOSFET model and its application to variability analysis of 90nm and 40nm CMOS. In Keith A. Bowman, Kamesh V. Gadepally, Pallab Chatterjee, Mark M. Budnik, Lalitha Immaneni, editors, Thirteenth International Symposium on Quality Electronic Design, ISQED 2012, Santa Clara, CA, USA, March 19-21, 2012. pages 553-560, IEEE, 2012. [doi]
@inproceedings{SakamotoKSWM12,
title = {st principles compact MOSFET model and its application to variability analysis of 90nm and 40nm CMOS},
author = {Hironori Sakamoto and Shigetaka Kumashiro and Shigeo Sato and Naoki Wakita and Tohru Mogami},
year = {2012},
doi = {10.1109/ISQED.2012.6187548},
url = {http://dx.doi.org/10.1109/ISQED.2012.6187548},
researchr = {https://researchr.org/publication/SakamotoKSWM12},
cites = {0},
citedby = {0},
pages = {553-560},
booktitle = {Thirteenth International Symposium on Quality Electronic Design, ISQED 2012, Santa Clara, CA, USA, March 19-21, 2012},
editor = {Keith A. Bowman and Kamesh V. Gadepally and Pallab Chatterjee and Mark M. Budnik and Lalitha Immaneni},
publisher = {IEEE},
isbn = {978-1-4673-1034-5},
}