Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry. Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories. In International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA. pages 2268-2271, IEEE, 2007. [doi]
Abstract is missing.