A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

Guido De Sandre, Luca Bettini, Alessandro Pirola, Lionel Marmonier, Marco Pasotti, Massimo Borghi, Paolo Mattavelli, Paola Zuliani, Luca Scotti, Gianfranco Mastracchio, Ferdinando Bedeschi, Roberto Gastaldi, Roberto Bez. A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 268-269, IEEE, 2010. [doi]

Abstract

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