High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process

P. M. Santos, Vitor Costa, M. C. Gomes, Beatriz Borges, Mário Lança. High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process. Microelectronics Journal, 38(1):35-40, 2007. [doi]

@article{SantosCGBL07,
  title = {High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35mum CMOS process},
  author = {P. M. Santos and Vitor Costa and M. C. Gomes and Beatriz Borges and Mário Lança},
  year = {2007},
  doi = {10.1016/j.mejo.2006.09.015},
  url = {http://dx.doi.org/10.1016/j.mejo.2006.09.015},
  tags = {C++},
  researchr = {https://researchr.org/publication/SantosCGBL07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {38},
  number = {1},
  pages = {35-40},
}