Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors

W. A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson. Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 88:393-396, 2018. [doi]

Abstract

Abstract is missing.