Uwe Schroeder, Milan Pesic, Tony Schenk, H. Mulaosmanovic, Stefan Slesazeck, J. Ocker, C. Richter, E. Yurchuk, K. Khullar, J. Muller, P. Polakowski, E. D. Grimley, J. M. LeBeau, S. Flachowsky, S. Jansen, S. Kolodinski, R. van Bentum, A. Kersch, C. Kunneth, Thomas Mikolajick. Impact of field cycling on HfO2 based non-volatile memory devices. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 364-368, IEEE, 2016. [doi]