Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications

K. Seidel, K. Biedermann, J. Van Houdt, T. Ali, R. Hoffmann, K. Kühnel, M. Czernohorsky, M. Rudolph, B. Pätzold, P. Steinke, K. Zimmermann. Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. In 19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

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