Dielectric reliability of stacked Al::2::O::3::-HfO::2:: MIS capacitors with cylinder type for improving DRAM data retention characteristics - researchr publication

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J. Y. Seo, K. J. Lee, S. Y. Lee, S. J. Hwang, C. K. Yoon. Dielectric reliability of stacked Al::2::O::3::-HfO::2:: MIS capacitors with cylinder type for improving DRAM data retention characteristics. Microelectronics Reliability, 45(9-11):1360-1364, 2005. [doi]

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