Simulation and characterization of ion irradiated 4H-SiC JBS diode

Rupendra Kumar Sharma, Pavel Hazdra, Stanislav Popelka. Simulation and characterization of ion irradiated 4H-SiC JBS diode. In 22nd International Conference Mixed Design of Integrated Circuits & Systems, MIXDES 2015, Torun, Poland, June 25-27, 2015. pages 567-570, IEEE, 2015. [doi]

Abstract

Abstract is missing.