Compact Design Models of Cryo and Room Temperature Si MOS, GaN, InGaAs, and p-diamond HEMT TeraFETs

M. Shur, J. Mikalopas, G. R. Aizin. Compact Design Models of Cryo and Room Temperature Si MOS, GaN, InGaAs, and p-diamond HEMT TeraFETs. In 2020 IEEE Radio and Wireless Symposium, RWS 2020, San Antonio, TX, USA, January 26-29, 2020. pages 209-212, IEEE, 2020. [doi]

Abstract

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