ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology

Marco Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten. ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 194-197, IEEE, 2018. [doi]

Abstract

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