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Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz

Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay. Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. In Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024. pages 1-2, IEEE, 2024. [doi]

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