Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Hyunui Lee, Seok-Yong Kang, Young-Soo Sohn, Jung Hwan Choi, Yong-Cheol Bae, Seong-Jin Jang, Gyo-Young Jin. A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution. J. Solid-State Circuits, 52(1):250-260, 2017. [doi]
Abstract is missing.