NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation - researchr publication authors

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P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, S. Siddiqui, R. G. Southwick, E. Cartier. NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

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