P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, S. Siddiqui, R. G. Southwick, E. Cartier. NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]
@inproceedings{SrinivasanFSKES15,
title = {NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation},
author = {P. Srinivasan and J. Fronheiser and S. Siddiqui and A. Kerber and L. F. Edge and S. Siddiqui and R. G. Southwick and E. Cartier},
year = {2015},
doi = {10.1109/IRPS.2015.7112695},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112695},
researchr = {https://researchr.org/publication/SrinivasanFSKES15},
cites = {0},
citedby = {0},
pages = {2},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}